View TDA16831_203996.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Off-line SMPS Controller with 600 V Sense CoolMOS on Board
Preliminary Data Overview Features * PWM controller + sense CoolMOS attached in one compact package * 600 V avalanche rugged CoolMOS * Typical RDSon = 0.5 ... 3.5 at Tj = 25 C * Only 4 active Pins * Standard DIP-8 Package for Output Power 40 W * Only few external components required * Low start up current * Current mode control * Input Undervoltage Lockout * Max. Duty Cycle limitation * Thermal Shutdown * Modulated Gate Drive for low EMI
TDA16831-4
CoolSET
P-DIP-8-6
P-DSO-14-11
Type TDA 16831 TDA 16832 TDA 16833 TDA 16834 TDA 16831G TDA 16832G TDA 16833G
Data Sheet
Ordering Code Q67000-A9420 Q67000-A9422 Q67000-A9389 samples Q67000-A9421 Q67000-A9423 Q67000-A9419
1
Package P-DIP-8-6 P-DIP-8-6 P-DIP-8-6 P-DIP-8-6 P-DSO-14-11 P-DSO-14-11 P-DSO-14-11
1999-12-10
TDA 16831-4
Device
Output Power Range/ Required Heatsink1)
Output Power Range/ Required Heatsink1)
Vin = 85-270 VAC
TDA 16831 TDA 16832 TDA 16833 TDA 16834 TDA 16831G TDA 16832G TDA 16833G
1)
Vin = 190-265 VAC
10 W / no heatsink 20 W / no heatsink 40 W / no heatsink 40 W / no heatsink 10 W / no heatsink 20 W / no heatsink 40 W / 3 cm2
10 W / no heatsink 20 W / 6 cm2 30 W / 3 cm 40 W / 3 cm
2 2
10 W / no heatsink 20 W / 8 cm2 20 W / no heatsink
TA = 70 C
Data Sheet
2
1999-12-10
TDA 16831-4
Pin Configurations
N.C. FB N.C. D
1 2 3 4
8 7 6 5
AEP02782
GND V CC N.C. D
Figure 1
TDA 16831/2/3/4
P-DIP-8-6 for Applications with Pout 40 W: TDA 16831/2/3/4 Pin 1 2 3 4 5 6 7 8 Symbol N.C. FB N.C. D D N.C. Function Not Connected PWM Feedback Input Not Connected 600 V Drain CoolMOS 600 V Drain CoolMOS Not Connected PWM Supply Voltage PWM GND and Source of CoolMOS
VCC
GND
Data Sheet
3
1999-12-10
TDA 16831-4
GND FB N.C. N.C. D D D
1 2 3 4 5 6 7
14 13 12 11 10 9 8
AEP02783
GND V CC N.C. N.C. D D D
Figure 2
TDA 16831G/2G/3G
P-DSO-14-11 for Applications with Pout 20 W: TDA 16831G/2G/3G Pin 1 2 3 4 5, 6, 7 11 12 13 14 Symbol GND FB N.C. N.C. D N.C. N.C. Function PWM GND and CoolMOS Source PWM Feedback Input Not Connected Not Connected 600 V Drain CoolMOS 600 V Drain CoolMOS Not Connected Not Connected PWM Supply Voltage PWM GND and Source of CoolMOS
8, 9, 10 D
VCC
GND
Data Sheet
4
1999-12-10
Data Sheet 5 1999-12-10
Figure 3
FB uvlo Vcc
Vref
Drain bias tempshutdown
Block Diagram
bandgap
RFB
pwmss sst
pwmcomp logpwm gtdrv
biaspwm
pwmop
rlogpwm
R Q
biaspwm
slogpwm pwmrmp alogpwm
S
Q
v04sst
v04sst
osc tff
kippl
3
J slogpwm
csshutdown
Rsense
kippl
5
K pwmpls
TDA 16831-4
GND
TDA 16831-4
Circuit Description The TDA 16831-4 is a current mode pulse width modulator with integrated sense CoolMOS transistor. It fulfills the requirements of minimum external control circuitry for a flyback application. Current mode control means that the current through the MOS transistor is compared with a reference signal derived from the output voltage of the flyback application. The result of that comparison determines the on time of the MOS transistor. To minimize external circuitry the sense resistor which gives information about MOS current is integrated. The oscillator resistor and capacitor which determine the switching frequency are integrated, too. Special efforts have been made to compensate temperature dependency and to minimize tolerances of this resistor. The circuit in detail: (see Figure 3) Start Up Circuit (uvlo) Uvlo is monitoring the external supply voltage VCC. When VCC is exceeding the on threshold VCCH = 12 V, the bandgap, the bias circuit and the soft start circuit are switched on. When VCC is falling below the off-threshold VCCL = 9 V the circuit is switched off. During start up the current consumption is about 30 A. Bandgap (bg) The bandgap generates an internal very accurate reference voltage of 5.5 V to supply the internal circuits. Current Source (bias) The bias circuit provides the internal circuits with constant current.
Data Sheet 6
Oscillator (osc) The oscillator is generating a frequency twice the switching frequency fswitch = 100 kHz. Resistor, capacitor and current source which determine the frequency are integrated. The charging and discharging current of the implemented oscillator capacitor is internally trimmed, in order to achieve a very accurate switching frequency. Temperature coefficient of switching frequency is very low ( see page 19). Divider Flip Flop (tff) Tff is a flip flop which divides the oscillator frequency by one half to create the switching frequency. The maximum duty cycle is set to Dmax = 0.5. Current Sense Amplifier (pwmop) The positive input of the pwmop is applied to the internal sense resistor. With the internal sense resistor (Rsense) the sensed current coming from the CoolMOS is converted into a sense voltage. The sense voltage is amplified with a gain of 32 dB. The amplified sense voltage is connected to the negative input of the pwm comparator. Each time when the CoolMOS transistor is switched on, a current spike is superposed to the true current information. To eliminate this current spike the sense voltage is smoothed via an internal resistor capacitor network with a time constant of Td1 = 100 ns. This is the first leading edge blanking and only a small spike is left. To reduce this small spike the current sense amplifier is creating a virtual ramp at the output. This is done by a second resistor capacitor network with Td2 = 100 ns and an op-offset of 0.8 V which is seen at the output of the amplifier. When gate drive is
1999-12-10
TDA 16831-4
switched off the output capacitor is discharged via pulse signal pwmpls. The oscillator signal slogpwm sets the RS-flipflop. The gate drive circuit is switched on, when capacitor voltage exceeds the internal threshold of 0.4 V. This leads to a linear ramp, which is created by the output of the amplifier. Therefore duty cycle of 0 % is possible. The amplifier is compensated through an internal compensation network. The transfer function of the amplifier can be described as
Logic (logpwm) The logic logpwm comprises a RS-flip-flop and a NAND-gate. The NAND-gate insures that CoolMOS transistor is only switched on when sosta is on and pwmin has exceeded minimum threshold and pwmin is below pwmrmp and currentshutdown is off and tempshutdown is off and tff sets the starting impulse. CoolMOS transistor is switched off when pwmrmp exceeds pwmin or duty cycle exceeds 0.5 or pwmcs exceeds Imax or silicium temperature exceeds Tmax or uvlo is going below threshold. The RS flip flop ensures that with every frequency period only one switch on can occur (double pulse suppression). Gate Drive (gtdrv) Gtdrv is the driver circuit for the CoolMOS and is optimized to minimize EMI influences and to provide high circuit efficiency. This is done by smoothing the switch on slope when reaching the CoolMOS threshold. Leading switch on spike is minimized then. When CoolMOS is witched off, the falling slope of the gate driver is slowed down when reaching 2 V. So an overshoot below ground can't occur. Also gate drive circuit is designed to eliminate cross conduction of the output stage. Current Shut Down (cssd) Current shut down circuit switches the CoolMOS immediately off when the sense current is exceeding an internal threshold of 100 mV at Rsense.
Ki Vo ----- = ----------------------------------- ; p = j Vi p x (1 + T x p)
the step response is described with
--------- o ae T V o = V i x K i x c t on - T + T x e / e -t on
40 K i = ----t on T = 850 ns Comparator (pwmcomp) The comparator pwmcomp compares the amplified current signal pwmrmp of the CoolMOS with the reference signal pwmin. Pwmin is created by an external optocoupler or external transistor and gives the information of the feedback circuitry. When the pwmrmp exceeds the reference signal pwmin the comparator switches the CoolMOS off.
Data Sheet
7
1999-12-10
TDA 16831-4
Tempshutdown (tsd) Tempshutdown switches the CoolMOS off when junction temperature of the PWM controller is exceeding an internal threshold.
Data Sheet
8
1999-12-10
TDA 16831-4
kippl, f = 200 kHz (oscillator)
pwmpls, f = 100 kHz (tff)
slogpwm (tff)
VFB
pwmrmp (pwmop) Gate Start at 0.4 V op-offset = 0.8 V
alogpwm (pwmcomp)
rlogpwm (pwmcomp)
gtrdrv
Q (logpwm)
AED02766
Figure 4
Data Sheet
Signal Diagram
9 1999-12-10
TDA16831-4
Electrical Characteristics Absolute Maximum Ratings Parameter Supply Voltage Supply + Zener Current Drain Source Voltage Avalanche Current Voltage at FB Junction Temperature Storage Temperature Thermal Resistance System-Air
1) 2)
Symbol
Limit Values min. max. - 0.3 0
Unit Remarks V mA V Zener Voltage 1) page 11 Beware of Pmax 2)
VCC ICCZ VDS IAC VFB Tj Tstg RthSA RthSA
VZ
20 600
Icsthmax
- 0.3 - 40 - 50 5.5 150 150 90 125 V C C
t = 100 ns
K/W P-DIP-8-6 K/W P-DSO-14-11
Be aware that VCC capacitor is discharged before IC is plugged into the application board. Power dissipation should be observed.
Operating Range Parameter Supply Voltage Junction Temperature Symbol Limit Values min. max. Unit Remarks V C
VCC Tj
VCCH
- 25
VZ
120
Data Sheet
10
1999-12-10
TDA 16831-4
Supply Section -25 C < Tj < 120 C, VCC = 15 V Parameter Quiescent Current Supply Current Active Supply Current Active Supply Current Active Symbol Limit Values min. typ. max. 80 6 7.5 8.5 25 4.5 6 7 8.5 16 120 Unit Test Conditions
VCC Turn-On Threshold VCC Turn-Off Threshold VCC Turn-On/Off Hysteresis VCC Zener Clamp
Controller Thermal Shutdown Thermal Hysteresis
ICCL ICCHA ICCHA ICCHA VCCH VCCL VCCHY VZ TjSD TjHy
A
mA mA mA TDA 16831/2/G TDA 16833/G TDA 16834
12 12.5 V 9 V 3 V 17.5 19 V 135 2 150 C C TDA 16831/2/3/G/4
Oscillator Section -25 C < Tj < 120 C, VCC = 15 V Parameter Accuracy Temperature Coefficient Symbol f TK f Limit Values min. typ. 90 100 1000 max. 110 kHz
ppm/C
Unit Test Conditions
Data Sheet
11
1999-12-10
TDA16831-4
PWM Section Parameter Duty Cycle Symbol D 0 4 2 1.3 2 70 0.45 3.5 3.0 3.7 600 5.3 5.5 0.2 Limit Values min. typ. Trans Impedance VFB / IDrain 2) ZPWM OP Gain Bandwidth 1) OP Phase Margin 1) max. 0.5 V/A TDA16831/G V/A TDA16832/G V/A TDA16833/G/4 MHz
degree
Unit Test Conditions
ZPWM ZPWM
Bw Phim
VFB Operating Range min. Level VFBmin VFB Operating Range max. Level VFBmax Feedback Resistance RFB Temperature Coefficient RFB RFBTK Internal Reference Voltage Vrefint Temperature Coefficient Vrefint Vreftk
1) Guaranteed by design
2)
0.85 V 4.8 V 4.9 K
ppm/C
for D = 0 Ics = 0.95 Icsth
5.7
V
mV/C
For discontinuous mode the VFB is described by:
--------- o --------- o ae T T I PK ae 1 2 = Z PWM x ------- x c t on - T 1 + T 1 x e / + 0.6 x c 1 - e / / c / t on c e e -ton -t on
V FB
T1 = 850 ns; T2 = 200 ns
Data Sheet
12
1999-12-10
TDA 16831-4
i
Output Section Parameter Symbol Limit Values min. typ. Drain Source Breakdown Voltage V(BR)DSS 600 Drain Source On-Resistance max. V Unit Test Conditions
TA = 25 C TA = 25 C:
TDA 16831/2/G TDA 16833/G TDA 16834 -25RDson RDson RDSon RDson RDSon RDson
Zero Gate Voltage Drain Current IDSS Output Capacitance COSS Avalanche Current IAR
3.5 1 0.5

9 2.7 1.6
A
pF A
0.5 25
50
VGS = 0
TDA 16833 tDR = 100 ns TDA 16831/G TDA 16832/G TDA 16833/G TDA 16834
Icsthmax
0.6 1.2 2.2 2.2 0.9 1.8 2.9 2.9 300 70 50 1.4 2.7 4.8 4.8
Isource Current Limit Threshold
Time Constant Icsth Rise Time Fall Time
Icsth Icsth Icsth Icsth tcsth trise tfall
A A A A ns ns ns
Data Sheet
13
1999-12-10
TDA 16831-4
Application Circuit
Vcc
Drain
TDA18831-4
CoolMOS PWM Controller
FB AC 85...270VAC
GND
Figure 5
Data Sheet
TDA 16831G/2G/3G: 4 Active Pins, Version without Soft Start
14 1999-12-10
TDA 16831-4
Quiescent Current versus Temperature
30
AED02767
Supply Current Active versus Temperature
6
AED02768
I CCL
A
25
I CCH
mA 5.5
TDA 16833
20
5 TDA 16831/2
15
4.5
10
4
5
3.5
0 -25
0
25
50
75
C 125
3 -25
0
25
50
75
C 125
T
T
Turn On/Off Supply Voltage versus Temperature
12.5 VCC V 12 11.5 11 10.5
AED02769
Turn On/Off Hysteresis
2.9
AED02770
VCCHY
V
VCCH
2.85
2.8
2.75
10 9.5
2.7
VCCL
9
2.65
8.5 8 -25 0 25 50 75 C 125
2.6 -25 0 25 50 75 C 125
T
Data Sheet 15
T
1999-12-10
TDA 16831-4
VCC Zener Clamp
AED02771
Switching Frequency versus Temperature
110 f kHz 106
AED02772
19
VZ
V 18.5
18
104 102
17.5
100 98
17
96
16.5
94 92
16 -25
0
25
50
75
C 125
90 -25
0
25
50
75
C 125
T
T
Maximum Duty Cycle versus Temperature TDA 16831/2/3/G/4
50 % 49 48.5 48 47.5 47
AED02773
Operational Amplifier Phase and Amplitude versus Frequency
40
AED02774
0
A dB
30 A /dB 20
Grad -40 -60 -80
Duty-cycle
10
/Grad
-100 -120
0
46.5 46 45.5 45 -25 0 25 50 75 C 125
-20 0 10 10 1 10 2 kHz 10 4 -10
-140 -160 -180 -200
T
Data Sheet 16
f
1999-12-10
TDA 16831-4
Feedback Voltage Operating Range versus Temperature
5 V For I CS = 0.95 I CSTH 4 3.5 3 2.5 2 1.5 1 For D = 0 0.5 0 -25 0 25 50 75 C 125
AED02775
Feedback Voltage versus Feedback Current
6
AED02776
VFB
VFB
V 5
4
3 Temp = 25 2 Temp = 130 1
0
0
0.5
1
mA
1.5
T
I FB
RDSon versus Temperature
AED02777
TDA 16833 Output Capacitance COSS versus VDS
100 COSS pF 80
AED02778
8
RDSON
7 6 5 TDA 16831 4 3 2 TDA 16833 1 0 -25
70 60 50 40 30 20 10
0 25 50 75 C 125
0 40
50
60
70
80
V 100
T
Data Sheet 17
VDS
1999-12-10
TDA 16831-4
Isource Current Limit Threshold Icsth
versus Temperature
3.5
AED02779
Normalized Overcurrent Shutdown versus Drain Current Slope
I Drain 6 I CSTH
5 TDA 16831
AED02780
I CSTH A
3 2.5 2 TDA 16833
4 TDA 16832 3
1.5 1 0.5 0 -25
TDA 16832
2
TDA 16831
TDA 16833
1
0
0 25 50 75 C 125
0
2
4
6
T
A /s 10 dI dt
Data Sheet
18
1999-12-10
TDA 16831-4
Package Outlines P-DIP-8-6 (Plastic Dual In-line Package)
Data Sheet
19
1999-12-10
GPD05583
TDA16831-4
P-DSO-14-11 (Plastic Dual Small Outline)
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Data Sheet 20
Dimensions in mm 1999-12-10
GPS09222
TDA 16831-4
TDA 16831-4 Revision History: Previous Version: Page Page (in previous (in current Version) Version)
Current Version: 1999-11-08
Subjects (major changes since last revision)
Published by Infineon Technologies AG i. Gr., Bereichs Kommunikation, St.-Martin-Strasse 53 D-81541 Munchen
(c) Infineon Technologies AG1999
All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologiesis an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
21
1999-12-10

▲Up To Search▲

Price & Availability of TDA16831

	To Download TDA16831 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .